Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
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United States of America Patent
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Jul 4, 1995
Issued Date -
N/A
app pub date -
Oct 11, 1994
filing date -
Jul 22, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A trench MOSFET that includes a charge carrier getter region to substantially deplete a plurality of body regions during an off-state of this MOSFET to produce a very low off-state leakage current. In a first class of embodiments, this charge carrier getter region is a thin layer of material, of opposite conductivity type to that of the body regions, and located between a plurality of gate regions and the body regions. In a second class of embodiments, the gate regions are of opposite conductivity type to the body regions to function as a charge carrier getter region as well as a gate region.
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