Dynamic random access memory system

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United States of America Patent

PATENT NO 5430676
SERIAL NO

08202290

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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As interfaces to DRAMs become more advanced and higher performance, the interfaces and signal lines required to support the interface become more expensive to implement. Therefore, it is desirable to minimize the number of signal lines and maximize the bandwidth of the signal lines interfacing to the DRAM in order to take advantage of the high performance of the signal lines in the interface. In the DRAM memory system of the present invention, the address and control lines and are combined and the information multiplexed such that the DRAM pins have roughly equal information rate at all times.

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Patent Owner(s)

  • RAMBUS INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Atwood, Jr John G San Jose, CA 3 266
Barth, Richard M Palo Alto, CA 112 4696
Dillon, John B Palo Alto, CA 41 2702
Farmwald, Michael P Portola Valley, CA 10 691
Garrett, Jr Billy W Mountain View, CA 10 461
Ware, Frederick A Los Altos Hills, CA 757 10937

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