Method of making a thin film transistor by overlapping annealing using lasers
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United States of America Patent
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Jul 11, 1995
Issued Date -
N/A
app pub date -
Nov 3, 1993
filing date -
Nov 3, 1992
priority date (Note) -
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Abstract
The present invention provides a method of making a thin film transistor for driving a liquid crystal display comprising the steps of forming a gate electrode on a glass substrate and forming an insulating layer and an amorphous silicon layer in turn on said glass substrate and said gate electrode, and scanning laser beams on the surface of said amorphous silicon layer with the end portions of the respective scanned laser beams being overlapped. According to the method of making a thin film transistor for driving a liquid crystal display of the present invention, a thin film transistor suitable for HDTV, the field effect mobility of which is high, is achieved. Further, in making a thin film transistor, a separate processing step is not required and the number of processing steps can be reduced because constructional features of a TFT are utilized.
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