Method of manufacturing semiconductor device with copper core bumps
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United States of America Patent
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Jul 18, 1995
Grant Date -
N/A
app pub date -
Dec 22, 1992
filing date -
Apr 26, 1991
priority date (Note) -
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Importance
Abstract
A semiconductor device has circuit patterns formed on upper and lower surfaces of a laminated board with both surfaces lined with copper and interconnected by through holes, an IC chip mounted on the upper pattern, and external connection terminals mounted on the lower pattern, the external connection terminals comprising copper core bumps. According to a method of manufacturing such a semiconductor device, the same etching process as pattern etching for forming the circuit pattern are effected in bump forming regions on the circuit pattern formed by the resist pattern.
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