Substrate for epitaxy and epitaxy using the substrate
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United States of America Patent
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Jul 18, 1995
Grant Date -
N/A
app pub date -
Apr 23, 1993
filing date -
Apr 23, 1992
priority date (Note) -
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Abstract
A substrate wafer for epitaxy of a compound semiconductor single crystal and an epitaxy using the substrate wafer are disclosed. Where the orientation off-angle from the <100> plane of an area available for device formation of a surface of the substrate wafer is .theta..degree., and the growth rate on an epitaxial layer on the substrate wafer is V .mu.m/hr, and the growth temperature of the epitaxial layer is T K, the orientation off-angle .theta..degree. is given by the following expression: ##EQU1## where 0.1.ltoreq.V.ltoreq.10 and 853.ltoreq.T.ltoreq.1023. The substrate wafer is capable of significantly reducing the number of teardrop-like hillock defects which appear on the surface of the epitaxial layer and of increasing the smoothness of the surface of the epitaxial layer.
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