Method for planarization
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United States of America Patent
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Jul 18, 1995
Grant Date -
N/A
app pub date -
Jan 28, 1994
filing date -
Jan 28, 1994
priority date (Note) -
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status (Latency Note)
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Abstract
A method for planarization of the upper surface of a semiconductor wafer. A wafer with features formed thereon is loaded into the apparatus after having been coated with an interlevel dielectric. Thereafter, the wafer is subjected to suitably elevated temperature while a uniform elevated pressure is applied. Once the temperature and pressure conditions exceed the yield stress of the film, the film will flow and fill the microscopic as well as global depressions in the wafer surface. Thereafter, the temperature and pressure is reduced so that the film will become firm again thereby leaving a planar upper surface on the wafer.
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