Grounding method to eliminate the antenna effect in VLSI process
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United States of America Patent
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Jul 18, 1995
Grant Date -
N/A
app pub date -
Sep 22, 1993
filing date -
Sep 22, 1993
priority date (Note) -
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Abstract
A method of subjecting an integrated circuit, having electrically grounded elements and large first metal regions on its surface which are connected to device structures, to a plasma process, is described. Large first metal regions are connected to the electrically grounded elements. The integrated circuit is placed in a chamber for accomplishing the plasma process. The integrated circuit is subjected to the plasma process such that the connecting of the large first metal regions to the electrically grounded elements prevents damage to the device structures. The integrated circuit is removed from the chamber. Finally, the large first metal regions are disconnected from the electrically grounded elements.
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