Semiconductor memory device with reduced power consumption and reliable read mode operation

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United States of America Patent

PATENT NO 5434824
SERIAL NO

08268573

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Abstract

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A semiconductor memory device includes a memory cell array formed of a plurality of memory cells, a peripheral circuit supplied with address signals for selecting a memory cell in the memory cell array, the peripheral circuit further conducting a reading of the content of information stored in the selected memory cell and producing an output indicative thereof, and an address transition detection circuit for detecting a transition in any of the address signals and further for detecting a transition of the output of the peripheral circuit, wherein the address transition detection circuit activates the peripheral circuit when a transition has occurred in any of the address signals and the output of the peripheral circuit.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU SEMICONDUCTOR LIMITED2-10-23 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA-SHI KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsuzaki, Yasuro Kawasaki, JP 8 55

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