Sputtering target and method for producing same
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United States of America Patent
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Jul 25, 1995
Grant Date -
N/A
app pub date -
Nov 23, 1993
filing date -
Nov 24, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A sputtering target having a relative density of 90% or more and a single-phase structure for forming a indium-tin oxide layer of low resistance is produced by pressing a composite powder of indium oxide and tin oxide having an average diameter of 0.1 .mu.m or less and a tin content controlled to 1.5-6 weight %; and sintering the pressed composite powder at 1500.degree.-1700.degree. C. in an oxygen atmosphere pressurized at 1-10 atm.
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