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Abstract

A semiconductor device having superior electrical characteristics is fabricated. 50 nm of the surface of a CZ (100) silicon substrate is oxidized to form an oxidized film. Afterwards a first ion implantation of boron ions is conducted to this silicon substrate amounting to 7.times.10.sup.13 cm.sup.-2 with acceleration energy of 1.5 MeV. Next, a first annealing in nitrogen ambient at 1050.degree. C. for 40 minutes is conducted. Through this ion implantation process a damaged layer and a dopant layer are formed within the silicon substrate. Boron ions are implanted as a second ion implantation, with a dosage of 7.times.10.sup.13 cm.sup.-2, followed by a second implanted annealing in nitrogen ambient at 1050.degree. C. for 40 minutes. Further, as a third ion implantation, boron ions are implanted with a dosage of 6.times.10.sup.13 cm.sup.-2 followed by a third annealing in nitrogen ambient at 1050.degree. C. for 40 minutes. In the dopant layer thus formed, through a plurality of repeated high energy ion implantation and subsequent annealing, in order to obtain the desired dopant concentration, density of secondary defect occurrences may be lowered.

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