Semiconductor memory device with high dielectric capacitor structure

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5436477
SERIAL NO

08262116

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Abstract

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Transfer gate transistors are formed on a main surface of a semiconductor substrate. The transfer gate transistors have impurity regions for serving as source/drain regions. A first interlayer insulating film having a substantially flat upper surface is formed to cover the transfer gate transistors. The first interlayer insulating film is provided with contact holes reaching the impurity regions. Plugs are formed in the contact holes. Capacitors are only formed on the flat upper surface of the first interlayer insulating film. Lower electrodes of the capacitors and the plugs are electrically connected with each other through barrier layers. Thus, it is possible to improve capacitances of capacitors in a DRAM.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MITSUBISHI DENKI KABUSHIKI KAISHATOKYO5930

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashizume, Yasushi Hyogo, JP 10 175
Shinkawata, Hiroki Hyogo, JP 32 341

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SEIKO EPSON CORPORATION (1)
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RAMTRON INTERNATIONAL CORPORATION (1)
* 5109357 DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line 26 1990
 
WEEDEN CAPITAL PARTNERS, L.P., 180 MAIDEN LANE, NEW YORK, NEW YORK 10038 (1)
* 5046043 Ferroelectric capacitor and memory cell including barrier and isolation layers 165 1987
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (1)
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INTERNATIONAL BUSINESS MACHINES CORPORATION (13)
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* 5585998 Isolated sidewall capacitor with dual dielectric 34 1995
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* 6150230 Trench separator for self-defining discontinuous film 10 1999
6191469 Overhanging separator for self-defining discontinuous film 0 2000
 
POLARIS INNOVATIONS LIMITED (3)
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6297526 Process for producing barrier-free semiconductor memory configurations 2 1999
6605505 Process for producing an integrated semiconductor memory configuration 0 2001
 
LUCENT TECHNOLOGIES INC. (3)
* 5825073 Electronic component for an integrated circuit 8 1997
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6358790 Method of making a capacitor 4 1999
 
MICRON TECHNOLOGY, INC. (2)
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (2)
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GLOBALFOUNDRIES INC. (3)
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SAMSUNG ELECTRONICS CO., LTD. (2)
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INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (1)
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Ultrasource, Inc. (8)
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RENESAS ELECTRONICS CORPORATION (1)
* 6004839 Semiconductor device with conductive plugs 34 1997
 
ROHM CO., LTD. (1)
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TEXAS INSTRUMENTS INCORPORATED (2)
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MITSUBISHI DENKI KABUSHIKI KAISHA (3)
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KABUSHIKI KAISHA TOSHIBA (8)
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FUJITSU SEMICONDUCTOR LIMITED (1)
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MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
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NEC ELECTRONICS CORPORATION (2)
* 5652446 Semiconductor memory device with improved capacitor 5 1995
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AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (2)
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Radiant Technologies, Inc. (4)
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HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (2)
* 6034392 Semiconductor device having capacitor 4 1998
6242316 Semiconductor device having capacitor and method of fabricating the same 3 1999
* Cited By Examiner