MOS-type semiconductor device and method of making the same
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United States of America Patent
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Jul 25, 1995
Grant Date -
N/A
app pub date -
Jan 19, 1994
filing date -
Jan 21, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A MOS semiconductor device and a method of making the same are arranged to include a semiconductor substrate of a first conductivity type; a pair of impurity diffused layers of a second conductivity type different from the first conductivity type formed in the semiconductor substrate and mutually separated by a distance of 0.1 .mu.m or less; a gate insulating film including at least two layers of a silicon oxide film and a silicon nitride film and formed on a portion of the semiconductor substrate disposed between the pair of impurity diffused layers; and a gate electrode formed on the gate insulating film, wherein preferably the silicon nitride film has a thickness of 4.5 nm to 14.86 nm.
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