Plasma CVD process for forming amorphous silicon thin film
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United States of America Patent
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Aug 1, 1995
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N/A
app pub date -
Jul 19, 1994
filing date -
Sep 21, 1993
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Abstract
A process for forming a thin film of amorphous silicon of a uniform thickness on a relatively large glass plate. The process comprising forming a thin film of amorphous silicon on an insulating substrate by a plasma enhanced chemical vapor deposition process while intermittently generating a high frequency discharge. The duration of each discharge is set shorter than the time period necessary for the DC bias voltage, which is generated on the high frequency-applying electrode side, to attain a saturated value.
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