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Abstract

The present invention provides a method for forming thin films successively by magnetron sputtering, a method achieving uniform thickness distribution of each film on a substrate by varying the composition of process gas with the vacuum chamber and a structural configuration therein kept unchanged. In the magnetron sputtering wherein thin films composed of particles sputtered out of the target [2] are deposited on a substrate surface with plasma maintained by applying perpendicularly intersecting electric and magnetic fields in the space defined between the target and substrate and by introducing process gas into the chamber, the magnetic flux density is varied with the composition ratio of process gas introduced into the vacuum chamber [1] by attaching magnetic field generators [3], [14]: for applying the magnetic field so that the magnetic flux density in the electrode space is adjustable.

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First Claim