High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same
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United States of America Patent
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Aug 8, 1995
Grant Date -
N/A
app pub date -
Sep 17, 1993
filing date -
Sep 17, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for connecting a silicon substrate to an electrical component via a platinum conductor. The resulting structure may be heated in the presence of oxygen to temperatures in excess of 800.degree. C. without destroying the electrical connection between the silicon substrate and components connected to the platinum conductor. The present invention utilizes a TiN or TiW buffer layer to connect the platinum conductor to the silicon substrate. The buffer layer is deposited as a single crystal on the silicon substrate. The platinum layer is then deposited on the buffer layer. The region of the platinum layer in contact with the buffer layer is also a single crystal.
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