Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5442210
SERIAL NO

08144935

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor device has a DRAM portion forming a cache memory and a flash memory portion fabricated on a common substrate, fabricated by a process based on the process of fabricating the flash memory portion. An electrode layer common to capacitors of the DRAM portion and a floating gate layer of the flash memory portion are formed simultaneously from the same material. An electrode layer of the upper capacitor of the DRAM portion, a gate electrode layer for a transistor of the DRAM portion, and a control gate layer of the flash memory portion are formed simultaneously from the same material.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
NIPPON PRECISION CIRCUITS LTD5-8 GINZA 3-CHOME CHUO-KU A CORP OF JAPAN TOKYO

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kanehachi, Kaoru Tokyo, JP 4 67

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation