Method of manufacturing a semiconductor device readily capable of removing contaminants from a silicon substrate
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United States of America Patent
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Aug 22, 1995
Grant Date -
N/A
app pub date -
Dec 23, 1993
filing date -
Dec 25, 1992
priority date (Note) -
Expired
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Abstract
For removing contaminants (32) from a silicon substrate (31) having a principal surface (31a), a polycrystalline silicon film (34) is formed on an oxidation film (33) which is formed by oxidizing the principal surface. Selective oxidation is used. As a result, the contaminants are mainly concentrated around an interface between the oxidation and the polycrystalline silicon films. Thereafter, the oxidation and the polycrystalline silicon films are deleted from the silicon substrate. Therefore, the contaminants are eliminated from the silicon substrate together with the oxidation and the polycrystalline silicon films.
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