Semiconductor programmable read only memory device
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United States of America Patent
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-
Aug 22, 1995
Grant Date -
N/A
app pub date -
Jan 25, 1994
filing date -
Jan 25, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A programmable semiconductor memory cell is provided; which secures a sufficient output signal voltage margin and which also has reduced current dissipation and improved durability. To program the programmable semiconductor memory cell of this invention, a high write potential is applied to the high-level lead of a fuse and a selector transistor is turned on to blow the fuse. When reading the memory cell, high read potential is applied to the high-level lead of the fuse. Because an emitter and base of an output transistor are connected to both leads of the fuse, the output transistor is turned on when the fuse is blown and is turned off when the fuse is not blown. The output transistor outputs an amplified signal voltage to an output line.
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