Shallow trench isolation with thin nitride liner
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United States of America Patent
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Sep 5, 1995
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N/A
app pub date -
Jun 29, 1994
filing date -
Jun 29, 1994
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Abstract
A method of forming shallow trench isolation with a nitride liner layer for devices in integrated circuits solves a problem of recessing the nitride liner that led to unacceptable voids in the trench filler material by using a liner thickness of less than 5 nm. A densification step of a pyrogenic oxide anneal at 800.degree. C. not only drives out impurities and achieves the same density as a conventional argon anneal at 1000.degree. C., but also drastically reduces the thermal load.
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