Charge-coupled device having an improved charge-transfer efficiency over a broad temperature range
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United States of America Patent
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Sep 5, 1995
Issued Date -
N/A
app pub date -
Mar 29, 1994
filing date -
Dec 9, 1992
priority date (Note) -
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Abstract
A charge-coupled device having an improved charge-transfer efficiency over a broad temperature range. The device comprises a substrate of semiconductor material of one conductivity type; a first buried channel formed in the substrate and of a conductivity type opposite to that of the substrate; a second buried channel of a conductivity type opposite to that of the substrate formed in the same region of the substrate as the first buried channel and having a greater depth of penetration into the substrate than the first buried channel; compensated regions formed at intervals in the buried channels providing a means for containing individual packets of charge and shaped for inducing a narrow channel effect and for producing a fringing electric field in a direction of charge transfer in uncompensated buried channel regions; electrode gates associated with each pair of adjoining compensated and uncompensated regions in the device; and means for clocking the electrodes for causing a string of charge packets to be transferred through the device.
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