Lateral bipolar transistor and FET compatible process for making it
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United States of America Patent
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Sep 12, 1995
Grant Date -
N/A
app pub date -
Dec 14, 1994
filing date -
Dec 14, 1994
priority date (Note) -
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Abstract
A lateral bipolar transistor and method of making the transistor are disclosed. The device is made by etching a trench around a central region of a semiconductor body. An emitter is buried beneath the surface of this central area and contact to it is made via a self-alignment technique. The collector region of the transistor is contacted through the floor of the trench while the base region of the transistor is contacted in a region that surrounds the trench. The described method is compatible with the simultaneous manufacture of FET devices on the same chip.
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