Multilayer buffer structure including II-VI compounds on a silicon substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 12, 1995
Grant Date -
N/A
app pub date -
May 16, 1994
filing date -
May 16, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A layer (32) of a HgCdTe compound epitaxially contacts a buffer structure, which in turn epitaxially contacts a silicon substrate (22). The buffer structure is formed of II-VI compounds, and preferably includes at least one layer (24) of a ZnSeTe compound epitaxially contacting the silicon substrate (22) and a layer (30) of a CdZnTe compound overlying the ZnSeTe compound layer (24). The ZnSeTe compound layer (24) may be provided as a single graded layer having a composition of ZnSe adjacent to the silicon and a composition of ZnTe remote from the silicon, or as two distinct sublayers with a ZnSe sublayer (26) adjacent to the silicon substrate (22) and a ZnTe sublayer (28) remote from the silicon substrate (22).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully