Semiconductor dicing method which uses variable sawing speeds
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United States of America Patent
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Sep 19, 1995
Grant Date -
N/A
app pub date -
Feb 22, 1994
filing date -
Mar 1, 1993
priority date (Note) -
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Abstract
A semiconductor dicing method capable of preventing the silver plating from refusing by heat generated during cutting at thick portions without reducing a large production amount. One end of a semiconductor wafer starts to be cut at a blade feeding speed of 16 mm/sec and the speed is gradually increased. The wafer is cut from a predetermined position to another predetermined position at the constant feeding speed of 40 mm/sec. The speed is then gradually decreased and another end of the semiconductor wafer finishes being cut at the feeding speed of 16 mm/sec. That is, at the cutting start, SPEED UP and at the cutting end, SLOW DOWN. Hence, the thick silver plating are slowly cut and the cutting part is cooled with cooling water. Thus, the heat generated by cutting friction can completely be controlled to prevent the silver plating from refusing.
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