Composite diagnostic wafer for semiconductor wafer processing systems
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United States of America Patent
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Sep 19, 1995
Grant Date -
N/A
app pub date -
Oct 31, 1994
filing date -
Oct 31, 1994
priority date (Note) -
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Abstract
A composite diagnostic wafer containing a placebo wafer having the same dimensions as a semiconductor wafer. The placebo wafer has affixed to one surface one or more ion current probes and one or more ion energy analyzers. As such, measurement instrumentation connected to the analyzer(s) and probe(s) determines ion current and ion energy at various locations on the placebo wafer during plasma generation within a semiconductor wafer processing system.
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