A thin-film bypass capacitor is fabricated by forming a plurality of through holes through the thickness of a nonconductive base substrate and filling the through holes with a conductive material to form ground vias and power vias. A sequence of back side metalization layers are applied to the back side surface of the base substrate. A sequence of bottom contact layers are applied to the front side surface of the base substrate. A bottom contact power terminal is formed in the bottom contact layer and is electrically isolated from remaining portions of the bottom contact layers by insulating plugs. A bottom contact metalization layer is applied to the surface of the bottom contact layers and the insulating plugs. A dielectric layer is formed on the surface of the bottom contact metalization layer. A ground metalization via and a power metalization via are formed at the surface of the dielectric layer. A sequence of top contact layers are applied to the surface of the dielectric layer and a front side ground terminal and front side power terminal are formed. A back side ground terminal and a back side power terminal are formed at the back side of the base substrate.
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