Method of manufacturing a semiconductor device having multilayer insulating films
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United States of America Patent
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Oct 17, 1995
Issued Date -
N/A
app pub date -
Apr 5, 1994
filing date -
Oct 30, 1990
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device having a flat surface and an interlayer insulating film having superior crack resistance comprises forming a first silicon oxide film having a superior crack resistance on a semiconductor substrate so as to cover the surface of a stepped pattern. A second silicon oxide film having a superior step coverage is deposited on the first silicon oxide film so as to fill the recessed portions of the stepped pattern and to cover the stepped pattern. The second silicon oxide film is etched to a prescribed thickness. A third silicon oxide film superior in filling of recesses is placed into the recessed portions existing on the surface of the second silicon oxide film after its etching. A fourth silicon oxide film is formed on the semiconductor substrate including the second silicon oxide film and third silicon oxide film.
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