US Patent No: 5,460,684

Number of patents in Portfolio can not be more than 2000

Stage having electrostatic chuck and plasma processing apparatus using same

Stats

ATTORNEY / AGENT: (SPONSORED)
 

Importance

Loading Importance Indicators... loading....

Abstract

The plasma etching apparatus for a semiconductor wafer includes a susceptor provided in the vacuum process chamber. An electrostatic chuck for attracting and holding the wafer is provided on the susceptor. The electrostatic chuck comprises a chuck electrode provided on the susceptor via an insulative layer. The chuck electrode is connected to the positive terminal of the DC power supply via a switch. The chuck electrode is coated with a resistive layer, and the wafer is placed directly on the resistive layer. The resistive layer exhibits an electric resistivity of 1.times.10.sup.10 .OMEGA..multidot.cm to 1.times.10.sup.12 .OMEGA..multidot.cm in a temperature range for etching. The resistive layer is formed to have such a surface roughness that a center line average hight falls within a range of 0.1 to 1.5 .mu.m. When the potential of the positive terminal of the DC power supply is applied to the chuck electrode, and the wafer is grounded via plasma, a contact potential difference is created between the surface of the resistive layer and the rear surface of the wafer, generating an electrostatic attractive force, so that the wafer is attracted and held by the resistive layer.

Loading the Abstract Image... loading....

First Claim

Related Publications

Loading Related Publications... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
TOKYO ELECTRON LIMITEDTOKYO5116

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asakawa, Teruo Tokyo-To, JP 33 823
Kondo, Masaki Toyoake, JP 186 782
Masuoka, Noboru Minami-Alps-shi, JP 2 112
Saeki, Hiroaki Shirane-Machi, JP 76 765

Cited Art

Patent Info (Count) # Cites Year
 
KABUSHIKI KAISHA TOSHIBA (4)
5,234,527 Liquid level detecting device and a processing apparatus 17 1991
5,250,137 Plasma treating apparatus 34 1991
5,221,450 Electrostatic chucking method 33 1991
5,290,381 Plasma etching apparatus 65 1991
 
TOKYO ELECTRON LIMITED (2)
5,203,945 Plasma processing apparatus having driving control section 10 1991
5,275,683 Mount for supporting substrates and plasma processing apparatus using the same 70 1992
 
FUJITSU MICROELECTRONICS LIMITED (1)
4,798,650 Method of dry etching aluminum 15 1988
 
KABUSHIKI KAISHA SHIBAURA SEISAKUSHO (1)
4,771,730 Vacuum processing apparatus wherein temperature can be controlled 110 1987
 
NGK INSULATORS, LTD. (1)
5,280,156 Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means 201 1991

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
APPLIED MATERIALS, INC. (26)
5,730,801 Compartnetalized substrate processing chamber 139 1994
5,822,171 Electrostatic chuck with improved erosion resistance 24 1995
5,583,737 Electrostatic chuck usable in high density plasma 24 1995
5,708,556 Electrostatic chuck assembly 27 1995
5,764,471 Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck 24 1996
5,790,365 Method and apparatus for releasing a workpiece from and electrostatic chuck 30 1996
5,885,469 Topographical structure of an electrostatic chuck and method of fabricating same 13 1996
5,801,915 Electrostatic chuck having a unidirectionally conducting coupler layer 13 1997
5,883,017 Compartmentalized substrate processing chamber 30 1997
6,023,405 Electrostatic chuck with improved erosion resistance 18 1998
6,359,264 Thermal cycling module 17 1998
6,033,482 Method for igniting a plasma in a plasma processing chamber 28 1998
6,104,596 Apparatus for retaining a subtrate in a semiconductor wafer processing system and a method of fabricating same 13 1998
6,557,248 Method of fabricating an electrostatic chuck 10 1998
6,462,928 Electrostatic chuck having improved electrical connector and method 13 1999
6,310,755 Electrostatic chuck having gas cavity and method 85 1999
6,246,567 Apparatus for igniting a plasma in a plasma processing chamber 19 1999
6,375,750 Plasma enhanced chemical processing reactor and method 7 2000
6,494,958 Plasma chamber support with coupled electrode 9 2000
6,490,146 Electrostatic chuck bonded to base with a bond layer and method 18 2001
6,538,872 Electrostatic chuck having heater and method 19 2001
7,697,260 Detachable electrostatic chuck 2 2004
7,480,129 Detachable electrostatic chuck for supporting a substrate in a process chamber 2 2005
7,589,950 Detachable electrostatic chuck having sealing assembly 3 2006
8,226,769 Substrate support with electrostatic chuck having dual temperature zones 0 2007
7,907,384 Detachable electrostatic chuck for supporting a substrate in a process chamber 0 2008
 
LAM RESEARCH CORPORATION (15)
6,042,686 Power segmented electrode 23 1995
5,847,918 Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors 13 1995
5,993,594 Particle controlling method and apparatus for a plasma processing chamber 26 1996
6,129,808 Low contamination high density plasma etch chambers and methods for making the same 79 1998
6,251,793 Particle controlling method for a plasma processing chamber 6 1999
6,464,843 Contamination controlling method and apparatus for a plasma processing chamber 16 1999
6,673,198 Semiconductor processing equipment having improved process drift control 6 1999
6,394,026 Low contamination high density plasma etch chambers and methods for making the same 33 2000
6,239,403 Power segmented electrode 16 2000
6,890,861 Semiconductor processing equipment having improved particle performance 20 2000
6,506,254 Semiconductor processing equipment having improved particle performance 52 2000
6,583,064 Low contamination high density plasma etch chambers and methods for making the same 30 2002
6,881,608 Semiconductor processing equipment having improved process drift control 1 2003
7,802,539 Semiconductor processing equipment having improved particle performance 3 2005
7,718,932 Electrostatic chuck having radial temperature control capability 1 2006
 
QCEPT TECHNOLOGIES, INC. (12)
6,957,154 Semiconductor wafer inspection system 4 2003
7,308,367 Wafer inspection system 3 2004
7,152,476 Measurement of motions of rotating shafts using non-vibrating contact potential difference sensor 0 2004
7,103,482 Inspection system and apparatus 2 2004
7,107,158 Inspection system and apparatus 5 2005
7,092,826 Semiconductor wafer inspection system 2 2005
7,379,826 Semiconductor wafer inspection system 0 2006
7,337,076 Inspection system and apparatus 2 2006
7,659,734 Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination 1 2007
7,900,526 Defect classification utilizing data from a non-vibrating contact potential difference sensor 2 2007
7,634,365 Inspection system and apparatus 0 2008
7,752,000 Calibration of non-vibrating contact potential difference measurements to detect surface variations that are perpendicular to the direction of sensor motion 1 2008
 
TOKYO ELECTRON LIMITED (6)
5,595,241 Wafer heating chuck with dual zone backplane heating and segmented clamping member 40 1994
5,622,593 Plasma processing apparatus and method 30 1996
RE36810 Plasma processing apparatus and method 5 1998
6,432,208 Plasma processing apparatus 3 2000
6,740,853 Multi-zone resistance heater 35 2002
7,017,652 Method and apparatus for transferring heat from a substrate to a chuck 2 2003
 
MICRON TECHNOLOGY, INC. (5)
6,080,272 Method and apparatus for plasma etching a wafer 1 1998
6,838,390 Method and apparatus for plasma etching a wafer 11 2000
7,297,637 Use of pulsed grounding source in a plasma reactor 0 2002
7,059,267 Use of pulsed grounding source in a plasma reactor 2 2002
7,253,117 Methods for use of pulsed voltage in a plasma reactor 0 2003
 
ANELVA CORPORATION (4)
5,569,350 Mechanism and method for mechanically removing a substrate 38 1995
5,651,826 Plasma processing apparatus 10 1996
6,013,162 Method of handling a substrate after sputtering and sputtering apparatus 3 1997
6,200,432 Method of handling a substrate after sputtering and sputtering apparatus 6 1999
 
CANON ANELVA CORPORATION (4)
7,623,334 Electrostatic chuck device 4 2003
7,724,493 Electrostatic chuck device 0 2008
7,791,857 Electrostatic chuck device 0 2008
7,848,077 Electrostatic chuck device 1 2009
 
CVC PRODUCTS, INC. (3)
6,106,682 Thin-film processing electromagnet for low-skew magnetic orientation 4 1998
6,126,790 Method of magnetically orienting thin magnetic films with a multiple-coil electromagnet 2 2000
6,475,359 Thin-film processing electromagnet with modified core for producing low-skew magnetic orientation 0 2000
 
HITACHI, LTD. (3)
6,394,797 Substrate temperature control system and method for controlling temperature of substrate 57 2000
6,549,393 Semiconductor wafer processing apparatus and method 6 2001
6,518,548 Substrate temperature control system and method for controlling temperature of substrate 19 2002
 
NGK INSULATORS, LTD. (3)
5,800,618 Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof 51 1995
6,101,969 Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof 28 1998
6,197,246 Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof 4 2000
 
THERMAL CORP. (3)
7,129,731 Heat pipe with chilled liquid condenser system for burn-in testing 0 2004
7,013,956 Heat pipe evaporator with porous valve 10 2004
7,143,818 Heat pipe evaporator with porous valve 1 2006
 
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (3)
5,969,934 Electrostatic wafer clamp having low particulate contamination of wafers 20 1998
6,538,873 Active electrostatic seal and electrostatic vacuum pump 2 1999
6,362,946 Electrostatic wafer clamp having electrostatic seal for retaining gas 6 1999
 
ASM JAPAN K.K. (2)
6,063,203 Susceptor for plasma CVD equipment and process for producing the same 12 1998
6,955,741 Semiconductor-processing reaction chamber 2 2002
 
CANON KABUSHIKI KAISHA (2)
6,638,359 Deposited film forming apparatus and deposited film forming method 5 2001
6,855,377 Deposited film forming apparatus and deposited film forming method 9 2003
 
GENERAL ELECTRIC COMPANY (2)
6,368,410 Semiconductor processing article 16 1999
6,706,205 Semiconductor processing article 2 2002
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
5,587,045 Gettering of particles from an electro-negative plasma with insulating chuck 3 1995
5,843,800 Gettering of particles from an electro-negative plasma with insulating chuck 1 1996
 
XEROX CORPORATION (2)
5,865,938 Wafer chuck for inducing an electrical bias across wafer heterojunctions 10 1996
5,637,189 Dry etch process control using electrically biased stop junctions 26 1996
 
COVALENT MATERIALS CORPORATION (1)
7,255,775 Semiconductor wafer treatment member 1 2003
 
INTEL CORPORATION (1)
6,181,555 Cooling system for integrated circuit chips in a portable computer 15 1999
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
6,273,023 Plasma processing apparatus capable of reliably, electrostatically attracting and holding and thus fixing semiconductor wafer 11 1999
 
NEC CORPORATION (1)
6,306,770 Method and apparatus for plasma etching 1 1999
 
NOVELLUS SYSTEMS, INC. (1)
5,810,933 Wafer cooling device 46 1996
 
OC OERLIKON BALZERS AG (1)
7,736,462 Installation for processing a substrate 0 2004
 
PACKARD HUGHES INTERCONNECT COMPANY (1)
5,986,873 Creating surface topography on an electrostatic chuck with a mandrel 1 1996
 
RENESAS ELECTRONICS CORPORATION (1)
7,974,067 Plasma processing apparatus and method of suppressing abnormal discharge therein 0 2006
 
SAMSUNG ELECTRONICS CO., LTD. (1)
6,123,805 Discharge electrode and process chamber of dry etching facility for manufacturing semiconductor devices 1 1999
 
SEMICONDUCTOR PROCESS CO., LTD. (1)
5,858,100 Substrate holder and reaction apparatus 35 1995
 
SUMITOMO OSAKA CEMENT CO., LTD. (1)
6,768,079 Susceptor with built-in plasma generation electrode and manufacturing method therefor 2 2002
 
VEECO INSTRUMENTS INC. (1)
6,001,183 Wafer carriers for epitaxial growth processes 23 1996
 
YOKOWO CO., LTD. (1)
7,274,004 Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support 10 2004