Multilevel interconnect structure with air gaps formed between metal leads
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United States of America Patent
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Oct 24, 1995
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N/A
app pub date -
May 27, 1994
filing date -
May 27, 1994
priority date (Note) -
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Abstract
A method for forming air gaps 22 between metal leads 16 of a semiconductor device and semiconductor device for same. A metal layer is deposited on a substrate 12. The metal layer is etched to form metal leads 16. A disposable solid layer 18 is deposited between the metal leads 16. A porous dielectric layer 20 is deposited on the disposable solid layer 18 and the tops of the leads 16, and the disposable solid layer 18 is removed through the porous dielectric layer 20, to form air gaps 22 between the metal leads 16 beneath the porous dielectric layer 20. The air gaps have a low-dielectric constant and result in reduced sidewall capacitance of the metal leads.
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