Method of forming silicide in integrated circuit manufacture
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United States of America Patent
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Oct 24, 1995
Grant Date -
N/A
app pub date -
Dec 27, 1991
filing date -
Dec 27, 1991
priority date (Note) -
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Abstract
Electrical discontinuities in a silicide formed on a patterned surface are prevented by forming metal fillets in the recesses of the patterned polysilicon covered surface, and then depositing a metal layer and reacting with silicon to form the silicide. The fillet provides extra metal at a place where there is typically a deficiency in conventional deposition techniques.
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