Dual port memory having a plurality of memory cell arrays for a high-speed operation

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United States of America Patent

PATENT NO 5463591
SERIAL NO

08225450

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Abstract

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A dual port memory has a plurality of memory cell arrays. Plural bit lines for one word are divided into k groups each including m bit lines, and k data busses are commonly provided for all of the memory cell arrays. Bit selecting circuits control data transfer between the data busses and the memory cell arrays. A shift register circuit includes a plurality of partial shift registers which are serially connected with each other and each of which includes serially connected registers corresponding to the data busses. The shift register circuit carries out parallel data transfer between the data busses and each of the partial shift registers, and serial data transfer between one of the partial shift registers and an outside circuit. A dual port memory is provided in which the number of circuit elements and the surface size of memory chips can be reduced while maintaining a high speed of operation.

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Patent Owner(s)

Patent OwnerAddress
NEC CORPORATIONTOKYO 108-8001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aimoto, Yoshiharu Tokyo, JP 11 184
Sugibayashi, Tadahiko Tokyo, JP 102 2564

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