Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device
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United States of America Patent
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Nov 7, 1995
Issued Date -
N/A
app pub date -
Jan 27, 1994
filing date -
Jun 7, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Nitrogen is piled-up at a top interface of a gate dielectric layer by a process of the present invention. A gate dielectric layer (14) is formed on a substrate (12). A buffer layer (16), such as polysilicon, is formed on the dielectric layer. A nitrogen source layer (18), such as oxynitride, is formed on the buffer layer. The device is annealed to drive nitrogen from the source layer through the buffer layer and to an interface (15) between the polysilicon and the dielectric, resulting in a high nitrogen concentration at this interface. A nitrogen concentration may also be achieved at an interface (13) between the dielectric layer and the substrate.
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