Stacked capacitor process using BPSG precipitates

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United States of America Patent

PATENT NO 5466627
SERIAL NO

08214608

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Abstract

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A MOST capacitor for use in a DRAM is formed by using BPSG precipitates after densification as a mask for etching a BPSG layer to form BPSG islands. The BPSG islands are then used as a mask for etching a polysilicon layer to form pillars in the polysilicon layer.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPORATIONNO 3 LI-HSIN RD II SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chin, Hsiaw-Sheng Bann-Chyau, TW 1 16
Lin, Jenn-Tarng Wann Hwa Area, TW 15 201
Lur, Water Taipei, TW 199 4799

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