Monolithic silicon opto-coupler using enhanced silicon based LEDS
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United States of America Patent
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Nov 14, 1995
Grant Date -
N/A
app pub date -
Oct 11, 1994
filing date -
Oct 11, 1994
priority date (Note) -
Expired
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Abstract
A monolithic opto-coupler employing silicon-insulator technology in which at least two p-type silicon islands disposed on said insulating layer and a light emitting diode having enhanced light emitting efficiency is formed on one of said islands. The enhanced light emitting diode is either of the type having the surface of said p-type silicon island being electrochemically etched to provide a porous silicon layer, having carbon implanted in damaged silicon, or having an amorphous silicon-carbide layer. A silicon diode detector is formed on the other island(s) and a reflective layer is disposed over the light-emitting diode and the detectors for coupling light generated in the light emitting diode to the silicon diode detector.
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