Denuded zone field effect photoconductive detector
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United States of America Patent
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Nov 14, 1995
Grant Date -
N/A
app pub date -
May 28, 1993
filing date -
May 28, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A compositionally graded HgCdTe radiation detector (10) is constructed to have a high purity 'denuded zone' (Region 2) that is formed adjacent to a radiation absorbing region (Region 1). The compositional grading results in an internally generated electric field that is orthogonally disposed with respect to an externally generated electric field applied between contacts (16, 18). The internally generated electric field has the effect of injecting photogenerated minority charge carriers into the denuded zone, thereby reducing recombination with photogenerated majority charge carriers and increasing carrier lifetime. The detector further includes a wider bandgap surface passivation region (Region 3) that functions to trap, or 'getter', impurities from the denuded zone and also to reduce surface recombination effects.
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