Bottom purge manifold for CVD tungsten process
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United States of America Patent
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-
Nov 21, 1995
Grant Date -
N/A
app pub date -
Apr 13, 1994
filing date -
Apr 13, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A bottom purge manifold for the gas purge channel of a CVD semiconductor processing chamber provides an obstruction in the purge gas flow from a purge gas passage to the central portion of the processing chamber. The gas flow is restricted by a ring having generally equally spaced holes therethrough obstructing the purge channel opening and retained in the channel by spring loaded retaining flanges. A set of fan-shaped slots carry the purge gas from the openings and direct it towards the center portion of the processing chamber. This manifold produces a generally uniform flow from the gas purge manifold to improve the uniformity of vapor deposition on the wafer's surface.
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