Thin film resistor and method of fabrication
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United States of America Patent
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-
Nov 21, 1995
Grant Date -
N/A
app pub date -
Jun 29, 1993
filing date -
Jun 29, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of fabricating a thin film resistor includes a step of sputter depositing a thin film of resistive material such as a chromium diboride compound on an insulative substrate using an argon sputter gas having a percentage of dopant such as nitrogen selected to optimize a trade off between desirably increasing the thickness of the film and undesirably increasing the temperature coefficient of resistance. A cap layer having a solid diffusant such as free chromium is deposited over the thin film of resistive material. The cap layer serves to protect the thin film of resistive material during subsequent patterning of conductors using wet etching, and also the solid diffusant diffuses into the resistive material during subsequent thermal treatment to drive the temperature coefficient of resistance back down.
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