Method of manufacturing semiconductor device using the abrasive
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United States of America Patent
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Nov 21, 1995
Grant Date -
N/A
app pub date -
Dec 13, 1994
filing date -
Dec 21, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed herein is abrasives consisting of fine particles of fluorinated silicon oxide which do not contain alkali metal and methods of thier manufacture, and high yield and high reliability methods of manufacturing semiconductor devices by the use of these abrasives. The abrasive comprises a solution in which fine particles of fluorinated silicon oxide are dispersed is formed by addition of boric acid to an aqueous solution of hydrosilicofluoric acid or addition of pure water to an alcohol solution of alkoxyfluorosilane. By the use of these abrasives, a layer insulating film for multi-layer wiring can be flattened.
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