Semiconductor wafer treating method
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United States of America Patent
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Nov 28, 1995
Grant Date -
N/A
app pub date -
Jul 8, 1994
filing date -
Aug 2, 1993
priority date (Note) -
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Abstract
A surface of a semiconductor water is washed with HF water solution, thereby removing an oxide film formed on a surface of the semiconductor water. Next, the surface of the semiconductor water is treated with mixed liquid of HF, HCl, H.sub.2 O.sub.2, and deionized water. Then, the surface of the semiconductor wafer is treated with mixed liquid of HCl, H.sub.2 O.sub.2, and deionized water, thereby removing the surface of the semiconductor wafer to remove metallic impurity such as Cu adhered onto the surface of the semiconductor wafer.
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