Method of forming patterned polyimide films
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United States of America Patent
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Nov 28, 1995
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N/A
app pub date -
Feb 18, 1992
filing date -
Feb 18, 1992
priority date (Note) -
Expired
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Abstract
A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.
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