Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
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United States of America Patent
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Dec 5, 1995
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N/A
app pub date -
Nov 17, 1994
filing date -
Nov 17, 1994
priority date (Note) -
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Abstract
A structure and fabrication method for an alternating-element phase-shifting mask (Alt PSM) wherein all the mask pattern components extending in a first direction, such as the x direction are formed on a first mask substrate and all the mask pattern components extending in a second direction orthogonal to the first direction, such as the y direction, are formed on a second mask substrate. The two mask substrates are either combined together in a single mask for a single exposure step on a wafer, or separate exposures may be made through each mask and superimposed on a single wafer.
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