Plasma vapor deposition apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5474611
SERIAL NO

08292228

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A plasma vapor deposition apparatus which can form high-quality films of ITO, for example, with high productivity, includes a vapor deposition chamber, a drive and a horizontally rotating circular holding plate connected to the drive located in a lower portion of the chamber, the circular holding plate having a circular vapor source material mounting centered at the rotational axis about which the plate is rotated by the drive, and coil-shaped electrodes for exciting vapor produced by evaporating the vapor source material. A film thickness correcting plate is interposed between the holding plate and the path along which the substrate is transported through the chamber by a transporting device. This plate is configured to so shield a portion of the substrate so that an excess of excited vapor particles do not accumulate at a given site on the surface of the substrate. Moreover, independently evacuatable evacuating sections are provided upstream and downstream of the vapor deposition chamber to constitute a processing line. The transporting device transports the substrate continuously along a first path through the processing line from an inlet section to an outline section. On the other hand, a return mechanism returns the substrate from the outlet section to the inlet section along a second path disposed above the first path.

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Patent Owner(s)

  • SHINCRON CO., LTD.;C. ITOH FINE CHEMICAL CO., LTD.;YOICHI MURAYAMA, SHINCRON CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Murayama, Yoichi Tokyo, JP 24 112
Narita, Toshio Tokyo, JP 29 145

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