Method of forming a liquid crystal display device
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United States of America Patent
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-
Dec 12, 1995
Issued Date -
N/A
app pub date -
May 3, 1994
filing date -
Apr 30, 1982
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Improved thin film transistors resistant to photo-induced current and having improved electrical contact between electrodes and the source or drain regions are provided. The thin film transistors formed in accordance with the invention are particularly well suited for use in an active matrix substrate for a liquid crystal display panel. The liquid crystal display panels include an additional insulating layer formed between crossing orthogonal source lines and gate lines to provide a higher breakdown voltage between the source lines and gate lines than at the gate insulating layer of the thin film transistors.
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