Semiconductor device with a conductive reaction-preventing film
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United States of America Patent
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Dec 12, 1995
Issued Date -
N/A
app pub date -
Sep 8, 1994
filing date -
Sep 28, 1990
priority date (Note) -
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Abstract
A semiconductor device comprised of a transistor (TR) having a gate electrode, a source region and a drain region, and a ferroelectric capacitor formed above a local oxide film. The capacitor has a ferroelectric film, and upper and lower electrodes that sandwich the film therebetween. The lower electrode and the source region are connected to each other through a wiring or interconnection which is formed of a conductive reaction-preventing film with an Al wiring electrode stacked thereon. The conductive reaction-preventing film is formed of TiN, MoSi, W, etc. If an annealing treatment is carried out for the purpose of improving the characteristics of the semiconductor device or a final protection film is formed after the formation of the wiring electrode, the wiring electrode and the upper electrode do not react with each other. Thus, excellent characteristics of the ferroelectric film are obtained so that a highly integrated ferroelectric memory having high performance can be formed.
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