Importance

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Abstract

A vertical microelectronic field emitter includes a conductive top portion and a resistive bottom portion in an elongated column which extends vertically from a horizontal substrate. An emitting electrode may be formed at the base of the column, and an extraction electrode may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips on the face of a substrate and then forming trenches in the substrate around the tips to form columns in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric and a conductor layer is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate with the trenches defining columns in the substrate. Then, tips are formed on top of the columns. The trenches are filled with dielectric and the conductor layer is formed on the dielectric to form the extraction electrodes.

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First Claim