Method of making reliable metal leads in high speed LSI semiconductors using both dummy leads and thermoconductive layers
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United States of America Patent
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Dec 19, 1995
Grant Date -
N/A
app pub date -
May 31, 1994
filing date -
May 31, 1994
priority date (Note) -
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Abstract
A method for manufacturing semiconductor device having metal leads 14 with improved reliability, and device for same, comprising metal leads 14 on a substrate 12, a low-dielectric constant material 18 at least between the metal leads 14, and thermoconductive insulating layer 22 deposited on the metal leads 14 and the low-dielectric constant material 18, and dummy leads 16 proximate metal leads 14. Heat from the metal leads 14 is transferable to the dummy leads 16 and thermoconductive insulating layer 22, which are both capable of dissipating the heat. A thin thermoconductive layer 24 may be deposited over the metal leads 14 prior to depositing at least the low-dielectric constant material 18 and the thermoconductive insulating layer 22. The low-dielectric constant material 18 has a dielectric constant of less than 3.5. An advantage of the invention is to improve reliability of metal leads for circuits using low-dielectric constant materials.
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