Method for programming a single EPROM or FLASH memory cell to store multiple levels of data that utilizes a floating substrate
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United States of America Patent
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Dec 19, 1995
Grant Date -
N/A
app pub date -
Feb 22, 1995
filing date -
Feb 22, 1995
priority date (Note) -
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Abstract
Multiple logic levels can be programmed into a single EPROM or FLASH memory cell by applying one of a corresponding number of programming voltages to the control gate of a memory cell that is biased so that the source-to-substrate junction becomes forward-biased and the drain-to-substrate junction becomes reverse-biased. During programming, the bias conditions form substrate hot electrons which, in addition to the channel hot electrons, accumulate on the floating gate. By utilizing the substrate hot electrons, a much lower control gate voltage can be utilized during programming. More importantly, however, once the channel hot electrons cease to exist, the substrate hot electrons and holes converge to a stable charge that is related to the control gate voltage used during programming and the programmed threshold voltage of the cell.
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