CVD diamond growth on hydride-forming metal substrates

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United States of America Patent

PATENT NO 5478513
SERIAL NO

08415119

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Abstract

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A method for producing CVD diamond film on a substrate comprised of a hydride-forming metal. The substrate provides for easy release of the CVD diamond coating formed thereon upon exposure to a hydrogen pressure. Self-supporting CVD diamond films of large dimension are easily obtained without dissolving the substrate. The substrate can be used in conventional CVD reactors.

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Patent Owner(s)

Patent OwnerAddress
GENERAL ELECTRIC COMPANYEVENDALE OH 45215

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anthony, Thomas R Schenectady, NY 81 2437
Kosky, Philip G Schenectady, NY 14 170

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