Method and apparatus for producing conductive layers or structures for VLSI circuits
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United States of America Patent
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Dec 26, 1995
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N/A
app pub date -
Mar 13, 1992
filing date -
Mar 30, 1990
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Abstract
Methods and apparatus for producing conductive layers or structures for VLSI circuits. In a method for producing conductive layers or structures for VLSI circuits, at least two method stages are implemented in direct succession in different chambers of a high-vacuum system without interrupting the high-vacuum conditions for the semiconductor substrate. Avoiding exposure to air between the method stages produces noticeably improved layer properties and enables particularly simple and reliable multi-stage methods for producing conductive layers that promote a multi-layer wiring on the semiconductor substrate. An apparatus for implementing the method has a plurality of high-vacuum process chambers, at least one high-vacuum distributor chamber connecting the process chambers and of at least two high-vacuum supply chambers for semiconductor substrates.
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