Semiconductor device with improved planarization properties
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United States of America Patent
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Dec 26, 1995
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N/A
app pub date -
Feb 18, 1993
filing date -
Mar 17, 1992
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Abstract
A polycrystalline silicon film is formed on the surface of a semiconductor substrate. An oxide film having a first impurity concentration is formed to cover the polycrystalline silicon film. A polycrystalline silicon film and a refractory metal silicide are formed on the surface of the oxide film having the first impurity concentration. An oxide film having a second impurity concentration higher than the first impurity concentration is formed to cover the polycrystalline silicon film and the refractory metal silicide. The third conductive layer is formed on the surface of the oxide film having the second impurity concentration.
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