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Abstract

A mask inspecting method for inspecting defects of a phase-shifting mask comprises the steps of converting pattern data of a designed circuit pattern to pattern data for a phase-shifting mask, manufacturing a phase-shifting mask as a function of the pattern data for a phase-shifting mask, detecting the phase-shifting mask using the same optical conditions as that of the exposure step in the process of manufacturing a semiconductor device which makes use of the phase shift method to obtain image data thereof and checking the image data with the pattern data of the designed circuit pattern. In the method, image data of the pattern data identical to a pattern transferred onto a semiconductor substrate can be obtained, so that it is possible to check the above pattern data with the pattern data of the circuit pattern. Thus, the inspection of the phase-shifting mask can be accomplished.

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First Claim